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Intel Completes Next Generation, 32nm Process Development Phase
Written by Andreas G 16 December 2008 21:36

Intel is continuously shrinking the transistor and now that AMD is finally getting a grasp of the 45nm node, Intel has announced that it is already well on their way with the 32nm manufacturing process. This means that Intel will keep its schedule of launching the first 32nm processors in the fourth quarter of 2009. Even if this might feel a bit early the date falls well into place with Intel's so called "tick-tock" strategy, where they announce a new processor architecture and the move to a new node every 12 months.

The press release follows below;

Intel Completes Next Generation, 32nm Process Development Phase

SANTA CLARA, Calif., Dec. 9, 2008 – Intel Corporation has completed the development phase of its next-generation manufacturing process that further shrinks chip circuitry to 32 nanometers (a billionth of a meter). The company is on track for production readiness of this future generation using even more energy-efficient, denser and higher performing transistors in the fourth quarter of 2009.
Intel will provide a multitude of technical details around the 32nm process technology along with several other topics during presentations at the International Electron Devices meeting (IEDM) next week in San Francisco. Finishing the development phase for the company’s 32nm process technology and production readiness in this timeframe means that Intel remains on pace with its ambitious product and manufacturing cadence referred to as the company’s “tick-tock” strategy.


Intels 45nm kretsar - uråldriga om ett år

That plan revolves around introducing an entirely new processor microarchitecture alternating with a cutting edge manufacturing process about every 12 months, an effort unmatched in the industry. Producing 32nm chips next year would mark the fourth consecutive year Intel has met its goal.
The Intel 32nm paper and presentation describe a logic technology that incorporates second-generation high-k + metal gate technology, 193nm immersion lithography for critical patterning layers and enhanced transistor strain techniques. These features enhance the performance and energy efficiency of Intel processors. Intel’s manufacturing process has the highest transistor performance and the highest transistor density of any reported 32nm technology in the industry. 
 “Our manufacturing prowess and resulting products have helped us widen our lead in computing performance and battery life for Intel-based laptops, servers and desktops,” said Mark Bohr, Intel Senior Fellow and director of process architecture and integration. “As we’ve shown this year, the manufacturing strategy and execution have also given us the ability to create entirely new product lines for MIDs, CE equipment, embedded computers and netbooks.”
Other Intel IEDM papers will describe a low power system on chip version of Intel’s 45nm process, transistors based on compound semiconductors, substrate engineering to improve performance of 45nm transistors, integrating chemical mechanical polish for the 45nm node and beyond; and, integrating an array of silicon photonics modulators. Intel will also participate in a short course on 22nm CMOS Technology.
--30--

Intel and the Intel logo are trademarks of Intel Corporation in the United States and other countries.
1 45nm product is manufactured on a lead-free process. Lead is below 1000 PPM per EU RoHS directive (2002/95/EC, Annex A).  Some E.U. RoHS exemptions for lead may apply to other components used in the product package.

 

Om Intel      
Intel (NASDAQ: INTC), världsledande inom halvledarutveckling, skapar tekniker och produkter som syftar till att underlätta människors liv och arbete. Mer information om Intel finns på www.intel.com/pressroom och blogs.intel.com.

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